TriQuint Semiconductor Reveals Gallium Nitride Products, Opens Industry's 1st GaN...

TriQuint Semiconductor Reveals Gallium Nitride Products, Opens Industry's 1st GaN Foundry Service

TriQuint Introduces New High Frequency GaN Product Family, First
GaN Foundry Service Opened for September Starts
HILLSBORO, Ore. & ATLANTA--(Business Wire)--
TriQuint Semiconductor (Nasdaq: TQNT), a leading RF semiconductor
manufacturer and foundry services provider, today released the first
of its gallium nitride (GaN) power transistors for a wide range of
high frequency applications including mobile base station, defense and
space communications systems. TriQuint also announced opening the
industry's first GaN Foundry service for customers with circuit
designs intended for production starts in September, 2008.

Gallium nitride represents the newest generation of amplifier
technology with significantly greater power density than other
processes. It offers considerable power savings and smaller device
form factors for space-conscious design applications and helps improve
electricity consumption, size and weight problems for a range of
communications applications. The benefits lead to better performance
and lower overall system costs for the customer, and can shrink carbon
footprints for network system operators focused on reducing global
warming.

TriQuint's first high frequency GaN device family is being
introduced at the IEEE IMS MTT-S microwave symposium in Atlanta,
Georgia, June 15-20. These discrete die-level devices boast up to
2.5-times the power density of high voltage gallium arsenide devices.
The new GaN devices operate up to 18 GHz, have 55% power added
efficiency (PAE), and can produce up to 90 Watts of output power.

GaN power technology has garnered significant defense and
commercial interest because of its ability to operate with
substantially greater power density (more wattage per square
millimeter) and efficiency compared to other commonly used solid-state
amplifier technologies. These factors enable the development of more
efficient, smaller amplifiers capable of operating at higher system
voltages, which lower overall system current demand and reduce the
cost of power conversion.

"TriQuint's work on the DARPA (Defense Advanced Research Projects
Agency) contract for high power, high frequency amplifiers has
progressed well. The new products we are announcing today represent
our first commercial release and we're excited about the opportunities
this presents for customers," remarked Dr. Gailon Brehm, Director,
TriQuint Defense Product Marketing. "GaN is one of several high power
processes we offer customers, and its unique advantages -- greater
power density, high efficiency and rugged dependability, will appeal
to designers working with high frequency, high power applications."

In March, TriQuint announced the largest gallium nitride epitaxial
wafer order in the history of IQE Plc. That order, with deliveries
scheduled throughout 2008, will support ongoing development efforts
and the roll-out of new commercial and defense products by TriQuint.

"Strategy Analytics sees future radar, communications, EW
(electronic warfare) and smart munitions platforms in the defense
sector driving early demand for GaN. There are also a myriad of
commercial opportunities within wireless infrastructure and satellite
communications as well as those in broadcasting and medical markets.
Inherent GaN properties including high power at high frequency,
coupled with high voltage and wide bandwidth performance, make gallium
nitride a technology that will see broad applications as it evolves in
the marketplace. GaN's further advantages including reduced form
factors and weight savings translate into system efficiencies that
positively impact both capital and operating expenditures," said Asif
Anwar, Director, GaAs and Semiconductor Technologies, Strategy
Analytics.

"Strategy Analytics recognizes there are alternative amplifier
process technologies in the market competing with GaN ... while this
has limited early opportunities for large scale gallium nitride
standard product portfolio development, a foundry service is well
positioned to serve these early prospects. In this regard, TriQuint's
experience in all of these markets as well as the leading place the
company holds as a foundry supplier puts TriQuint in a
strong position," he added.

TriQuint announced June 18th that it is opening gallium nitride
Foundry services beginning in September, 2008. Dr. Brehm remarked that
TriQuint's GaN Foundry services will initially target power amplifier
applications through the Ku frequency band.

"Now that we've released the first member of our GaN discrete
amplifier family for defense, commercial and space applications, we're
welcoming Foundry customers who have their own circuit designs ready
for September 2008 starts," Dr. Brehm said. "We want to meet with
customers, identify their needs and develop a successful
implementation production schedule."

Visit TriQuint's IMS MTT-S booth (#1027) June 17-19 in the Georgia
World Congress Center. Data sheets for the first members of the
TGF2023-xx family of GaN power transistors will soon be posted on
www.triquint.com; check the website for details or contact TriQuint:
GaN Foundry e-mail: lisa.howard@tqs.com; GaN discrete devices e-mail:
grant.wilcox@tqs.com. For detailed information about TriQuint's wide
range of products for networks, mobile handset, defense and space
applications, visit www.triquint.com. Register for new product details
and our newsletter at www.triquint.com/rf.

FORWARD LOOKING STATEMENTS

This TriQuint Semiconductor, Inc. (Nasdaq: TQNT) press release
contains forward-looking statements made pursuant to the Safe Harbor
provisions of the Private Securities Litigation Reform Act of 1995.
Readers are cautioned that forward-looking statements involve risks
and uncertainties. The cautionary statements made in this press
release should be read as being applicable to all related statements
wherever they appear. Statements containing such words as 'leading',
'exceptional', 'high efficiency', 'adding value', 'leading supplier',
or similar terms are considered to contain uncertainty and are
forward-looking statements. A number of factors affect TriQuint's
operating results and could cause its actual future results to differ
materially from any results indicated in this press release or in any
other forward-looking statements made by, or on behalf of, TriQuint
including, but not limited to: those associated with the
unpredictability and volatility of customer acceptance of and demand
for our products and technologies, the ability of our production
facilities and those of our vendors to meet demand, the ability of our
production facilities and those of our vendors to produce products
with yields sufficient to maintain profitability, as well as the other
"Risk Factors" set forth in TriQuint's most recent 10-Q report filed
with the Securities and Exchange Commission. This and other reports
can be found on the SEC web site, www.sec.gov. A reader of this
release should understand that these and other risks could cause
actual results to differ materially from expectations expressed /
implied in forward-looking statements.

FACTS ABOUT TRIQUINT

Founded in 1985, we "Connect the Digital World to the Global
Network"(TM) by supplying high-performance RF modules, components and
foundry services to the world's leading communications companies.
Specifically, TriQuint supplies products to four out of the top five
cellular handset manufacturers, and is a leading gallium arsenide
(GaAs) supplier to major defense and space contractors. TriQuint
creates standard and custom products using advanced processes that
include gallium arsenide, surface acoustic wave (SAW) and bulk
acoustic wave (BAW) technologies to serve diverse markets including
wireless handsets, base stations, broadband communications and
military. TriQuint is also lead researcher in a 3-year DARPA program
to develop advanced gallium nitride (GaN) amplifiers. TriQuint, as
named by Strategy Analytics in August 2007, is the number-three
worldwide leader in GaAs devices and the world's largest commercial
GaAs foundry. TriQuint has ISO9001 certified manufacturing facilities
in Oregon, Texas, and Florida and a production plant in Costa Rica;
design centers are located in North America and Germany. Visit
TriQuint at www.triquint.com/rf to register for our newsletters.

TriQuint Semiconductor, Inc.
Dr. Gailon Brehm, Director, Product Marketing
Tel: +1 972-994-3896
Mobile: +1 214-435-1186
gailon.brehm@tqs.com
or
Media Contact:
TriQuint Semiconductor, Inc.
Mr. Mark Andrews, Strategic MarComm Manager
Tel: +1 407-884-3404
Mobile: +1 407-353-8727
mark.andrews@tqs.com

Copyright Business Wire 2008