Mitsubishi Electric Announces Sale of Ka Band Plastic Package Low Noise GaAs HEMT

TOKYO--(Business Wire)--
Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura)
(TOKYO:6503) announced today that it has developed a Ka band plastic package low
noise GaAs high electron mobility transistor (HEMT), the MGF4963BL, which is
highly suitable for low noise amplifiers in 18-20GHz band direct broadcast
satellite (DBS) reception systems and very small aperture terminal (VSAT)
systems. Shipment will begin on February 25, 2009.

Summary of Sale
Product Model Features Sample price Shipment date Production

(Excl. tax)
Low Noise MGF4963BL NF: 0.70dB 50 yen Feb 25, 2009 1,000,000/month

GaAs HEMT Gs: 13.5dB

(f=20GHz)

Aim of Sale

Satellite communication systems have traditionally used mainly Ku band DBS
systems with a downlink of 12GHz and an uplink of 14GHz. With the recent
development and spread of high-speed data links and high-definition
broadcasting, increased attention is being paid to Ka band DBS systems, which
are more suitable for high-speed and high-volume data communication with a
downlink of 20GHz and an uplink of 30GHz. Especially in North America, the
service area for DBS systems that deliver high definition TV (HDTV) content is
expanding.

In broadcast satellite reception systems, a reception converter inside the
antenna receives 20GHz waves from satellites and converts them into 1GHz band
intermediate-frequency waves to be sent to the tuner. HEMTs are used in low
noise amplifiers for these reception converters. In the first stage of low noise
amplifiers, where low noise performance is required, ceramic package HEMTs are
typically used due to their high performance, despite their high price. However,
with the spread of HDTV content delivered via Ka band DBS, there is an
increasing demand for first-stage HEMTs with high performance at a lower price.

Mitsubishi Electric`s MGF4963BL is a plastic package HEMT that is more cost
effective than ceramic packaged models, and which achieves industry top-level
low noise and high gain characteristics that enables it to be used in both the
first stage and the second/third stages of amplifiers.

Product Features

1) Industry top-level low noise and high gain characteristics with a plastic
package, for reduced cost compared to ceramic packaged models

With a package and chip structure optimized to suit 20GHz band transmission,
compared to the company`s model for 12GHz (MGF4941AL) when measured at 20 GHz,
the new model has a noise figure (NF) of 0.70dB, a 0.05dB improvement, and an
associated gain (Gs) of 13.5dB, a 3.0dB improvement. Mitsubishi Electric has
achieved these industry top-level characteristics while reducing cost by
adopting a plastic package. These improvements enable DBS and VSAT reception
system manufacturers to use this product not only in the first stage of low
noise amplifiers, where low NF is essential, but also in the second/third
stages, where high Gs is important. As a result, this new model will contribute
to reducing cost in DBS and VSAT reception systems.

2) An industry standard micro-X package, for shorter development periods

The MGF4963BL has an industry standard micro-X package. Its foot pattern,
unchanged from previous models, will shorten development periods for satellite
communication equipment manufacturers.

Future Developments

Mitsubishi Electric will increase its lineup of plastic package HEMTs for higher
frequencies.

Other Features

- Recommended bias condition: VDS=2V, ID=10mA

- Noise figure (NFmin.): 0.70dB (f=20GHz, typical)

- Associated gain (Gs): 13.5dB (f=20GHz, typical)

About Mitsubishi Electric

With over 80 years of experience in providing reliable, high-quality products to
both corporate clients and general consumers all over the world, Mitsubishi
Electric Corporation (TOKYO:6503) is a recognized world leader in the
manufacture, marketing and sales of electrical and electronic equipment used in
information processing and communications, space development and satellite
communications, consumer electronics, industrial technology, energy,
transportation and building equipment. The company recorded consolidated group
sales of 4,049.8 billion yen (US$ 40.5 billion*) in the fiscal year ended March
31, 2008. For more information visit http://global.mitsubishielectric.com

*At an exchange rate of 100 yen to the US dollar, the rate given by the Tokyo
Foreign Exchange Market on March 31, 2008

Mitsubishi Electric Corporation
Product Inquiries:
Kazuhiko Sato, +81-3-3218-3014
High Frequency & Optical Semiconductor
Global Marketing Department B
Sato.Kazuhiko@aj.MitsubishiElectric.co.jp
http://www.mitsubishichips.com/
Media Contact:
Yurika Fujimoto, +81-3-3218-3380
Public Relations Division
prd.gnews@nk.MitsubishiElectric.co.jp
http://global.mitsubishielectric.com/news/

Copyright Business Wire 2009