STMicroelectronics Innovates High-Voltage Transistor Technology Enabling More Reliable...

STMicroelectronics Innovates High-Voltage Transistor Technology Enabling More
Reliable High-Efficiency Systems

Power MOSFETs increase breakdown voltage and avalanche capability, and cut
on-resistance by 30 percent over previous generation

GENEVA, May 11 /PRNewswire-FirstCall/ -- STMicroelectronics (NYSE: STM), a
world leader in power semiconductors, has introduced a new family of power
MOSFETs combining higher voltage capability, greater ruggedness, and lower
losses than previous devices, which are well suited for use in high-efficiency
power supplies for products such as LCD monitors, televisions and
energy-saving lamp ballasts.

The STx7N95K3 family introduces a new 950V breakdown-voltage class for power
MOSFETs. This new class benefits systems that minimize energy losses by
operating at high voltages such as 400V or more. Compared to competing 900V
devices, ST's new 950V power MOSFETs have a larger safe-operating area
delivering greater reliability. Designers can also use a single 950V MOSFET to
replace two-transistor circuits sometimes used to build high-voltage supplies,
simplifying design, reducing size and lowering component count.

In addition, the STx7N95K3 family has a higher avalanche current rating than
competing devices, which ensures greater resilience to surges above the
breakdown voltage which cause the device to avalanche. The avalanche-current
rating of 9A compares with around 1A for the nearest competing 900V devices.

As well as withstanding higher applied voltages, the STx7N95K3 family also
minimizes conduction losses by achieving RDS(ON) of less than 1.35 Ohm. This
represents a 30 percent reduction in RDS(ON) per device size compared to
previous-generation MOSFETs, and allows designers to increase power density as
well as improve efficiency.

At the same time, these new MOSFETs also deliver high switching performance by
achieving low gate charge (QG) and low intrinsic capacitance, which allow
designers to use higher switching frequencies, enabling the use of smaller
components to further enhance efficiency and power density.

STx7N95K3 MOSFETs achieve these performance advantages by using ST's
latest-generation SuperMESH3(TM) technology. The devices introduced are
offered in industry-standard packages including the STF7N95K3 in the TO-220FP
package, the STP7N95K3 in standard TO-220, and the STW7N95K3 in TO-247.

The next available devices will be the 950V BVDSS STW25N95K3, STP13N95K3,
STD5N95K3 and 1200V BVDSS STP6N120K3. ST will follow these devices with
further new product introductions in 2009, including 850V, 950V, 1050V and
1200V ranges.

The STx7N95K3 family is in production, priced at $2.00 in quantities of 1000
pieces.

Further information is available at www.st.com/pmos.

About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering
semiconductor solutions across the spectrum of microelectronics applications.
An unrivalled combination of silicon and system expertise, manufacturing
strength, Intellectual Property (IP) portfolio and strategic partners
positions the Company at the forefront of System-on-Chip (SoC) technology and
its products play a key role in enabling today's convergence markets. The
Company's shares are traded on the New York Stock Exchange, on Euronext Paris
and on the Milan Stock Exchange. In 2008, the Company's net revenues were
$9.84 billion. Further information on ST can be found at www.st.com.

PR No. P2381D

SOURCE STMicroelectronics

Michael Markowitz of STMicroelectronics, +1-212-821-8959,
michael.markowitz@st.com.