GLOBALFOUNDRIES Details Advanced Technology Aimed at 22nm and Beyond

At VLSI 2009, engineers describe new technique to continue scaling in HKMG
transistors
SUNNYVALE, Calif. & KYOTO, Japan--(Business Wire)--
GLOBALFOUNDRIES today described an innovative technology that could overcome one
of the key hurdles to advancing high-k metal gate (HKMG) transistors, bringing
the industry one step closer to the next generation of mobile devices with more
computing power and vastly improved battery life.

The semiconductor industry is celebrated for overcoming seemingly insurmountable
odds to continue the trend toward smaller, faster, and more energy-efficient
products. Performed in partnership with IBM through GLOBALFOUNDRIES`
participation in the IBM Technology Alliance, the new research is designed to
enable the continued scaling of semiconductor components to the 22 nanometer
node and beyond.

At the 2009 Symposium on VLSI Technology in Kyoto, Japan, GLOBALFOUNDRIES
reported the first demonstration of a technique that allows the equivalent oxide
thickness (EOT) in a high-k metal gate (HKMG) transistor to scale down to well
beyond the level required for the 22nm node, while maintaining a combination of
low leakage, low threshold voltages, and superior carrier mobility.

"HKMG is a critical component of GLOBALFOUNDRIES` technology roadmap," said
Gregg Bartlett, senior vice president of technology and research and
development. "This development could eventually provide customers with another
tool to enhance the performance of their products, particularly in the
fast-growing market for ultra-portable notebooks and smartphones with extended
battery life. In conjunction with IBM and the alliance partners, we are tapping
our global knowledge base to develop advanced technologies that will allow our
customers to stay at the leading edge of semiconductor manufacturing."

To maintain the switching precision of a HKMG transistor, the EOT of the high-k
oxide layer must be reduced. However, reducing the EOT increases the leakage
current, which can contribute to an increase in the power consumption of a
microchip. GLOBALFOUNDRIES and IBM have developed a new technique that overcomes
this barrier, demonstrating for the first time that EOT scaling to well beyond
the 22nm node can be achieved while maintaining the necessary combination of
leakage, threshold voltages, and carrier mobility. The results were successfully
demonstrated through fabrication of an n-MOSFET device with EOT of 0.55nm and a
p-MOSFET with EOT of 0.7nm.

ABOUT GLOBALFOUNDRIES

GLOBALFOUNDRIES is the world`s first truly global leading-edge semiconductor
manufacturing company. Launched in March 2009 through a partnership between AMD
(NYSE: AMD) and the Advanced Technology Investment Company (ATIC),
GLOBALFOUNDRIES provides a unique combination of leading-edge technology,
manufacturing excellence and global operations. GLOBALFOUNDRIES is headquartered
in Silicon Valley with facilities in Austin, Dresden and New York.

For more information on GLOBALFOUNDRIES, visit www.globalfoundries.com.

CAUTIONARY STATEMENT

This press release contains forward-looking statements, which are made pursuant
to the safe harbor provisions of the U.S. Private Securities Litigation Reform
Act of 1995 and include, without limitation, statements regarding the company's
current expectations, assumptions, assessments, anticipations, objectives,
plans, hopes, beliefs, intentions or strategies regarding the future. These
forward-looking statements therefore are subject to risks and uncertainties
which could cause actual results to differ materially. Some factors which
contribute to these risks and uncertainties include the economic conditions both
in the United States and around the world; the difficulties in developing new
customers; the demand and supply outlook in the overall semiconductor/foundry
industry; the sourcing strategy of potential customer base; competitor actions;
the success of company technology alliances; construction progress on additional
manufacturing facilities as well as associated governmental processes; the
availability of components and equipment; labor and employment issues at
manufacturing facilities; the progression of advances in technology and
processes; and unforeseen events. The company has no duty to update any
forward-looking statements in this release based on new information or events.

GLOBALFOUNDRIES
Jason Gorss, 518-899-2179
Communications
jason.gorss@globalfoundries.com

Copyright Business Wire 2009