Ramtron Announces 8-Megabit Parallel Nonvolatile F-RAM Memory

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Tue Jun 30, 2009 10:30am EDT 

  COLORADO SPRINGS, CO, Jun 30 (MARKET WIRE) -- 
Ramtron International Corporation (NASDAQ: RMTR), the leading developer
and supplier of nonvolatile ferroelectric random access memory (F-RAM)
and integrated semiconductor products, today announced the availability
of its 8-Megabit (Mb) F-RAM memory in a streamlined FBGA package. The
FM23MLD16 is an 8-Mbit, 3-volt, parallel nonvolatile RAM in a 48-pin
Fine-Pitch Ball Grid Array (FBGA) package that features fast access,
virtually unlimited read/write cycles and low power consumption.
Pin-compatible with asynchronous static RAM (SRAM), the FM23MLD16 targets
industrial control systems such as robotics, network RAID storage
solutions, multi-function printers, auto navigation systems, and a host
of other SRAM-based system designs.

    "The 8-Mbit F-RAM parallel memory and our recently released 4-Mbit
FM22LD16 are designed to meet customer demand for higher density memory
for write-intensive data collection applications," remarks Mike Peters,
Ramtron marketing manager. "Both products are pin-compatible, enabling an
easy density upgrade. The FM23MLD16 allows system designers eight times
the F-RAM density in an equivalent TSOP32 package footprint," adds Peters.

    Product Features

    The FM23MLD16 is organized as a 512K x 16 nonvolatile memory, accessed
with an industry standard parallel interface. Access time is 60ns and
cycle time is 115ns. The device reads and writes at bus speed for
NoDelay(TM) writes with endurance of at least 1E14 (100-trillion) writes
and 10-year data retention.

    The FM23MLD16 offers superior performance over battery-backed SRAM
(BBSRAM), as it does not require a battery for data backup. The FM23MLD16
is a true surface-mount solution, requiring no rework steps for battery
attachment and, unlike battery-backed SRAM, is highly resistant to
moisture, shock and vibration, making F-RAM ideal for harsh industrial
applications. The FM23MLD16 includes a low voltage monitor that blocks
access to the memory array when supply voltage drops below a critical
threshold. The memory is protected against an inadvertent access and data
corruption under this condition.

    With a convenient interface to current high-performance microprocessors,
the FM23MLD16 features a high-speed page mode that enables 8-byte burst
read/write operations at up to 33MHz. The device draws 9 milliamps for
reads/writes and a typical standby current of 180 microamps. It operates
from 2.7 to 3.6 volts over the industrial temperature range (-40 degrees C
to +85 degrees C).

    Pricing and Availability

    Samples of the FM23MLD16 are available now in a 48-pin FBGA package that
is RoHS-compatible. Pricing is $29.23 in quantities of 10K.

    About Ramtron

    Ramtron International Corporation, headquartered in Colorado Springs,
Colorado, is a fabless semiconductor company that designs, develops and
markets specialized semiconductor memory and integrated semiconductor
solutions used in a wide range of product applications and markets
worldwide. For more information, visit www.ramtron.com. For a 300-dpi
product photo, visit, www.ramtron.com/press-center/image-bank.aspx (see
Parallel Product Photos).

    

CONTACT:
Christopher Wray
(719) 481-7182
Email Contact

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