MoSys Announces Availability of 40nm PCI Express 2.0 PHY

Proven Interoperability with Industry Standard PCI Express Controller from
Denali Software Streamlines IO Sub-System Design
SUNNYVALE, Calif.--(Business Wire)--
MoSys, Inc., a leading supplier of differentiated high density embedded memory
and high data rate parallel and serial interface IP, today announced the
availability of its PCI Express 2.0 PHY. MoSys' PHY complies with the PIPE 2.0
specification and provides the physical layer (PHY) interface that connects to
industry standard PCI Express 2.0 controllers.

"The PCI Express standard, provided by PCI-SIG, is based on a very complex and
technical specification requiring best-in-class IP," said David Lin, Vice
President of Marketing at Denali Software. "MoSys' PCI Express 2.0 PHY, together
with our Databahn PCIe controller IP and PureSpec PCIe Verification IP, extends
our ability to offer high-quality end-to-end interface solutions to meet the
needs of our mutual 40nm customers."

"There is strong demand for high-quality, silicon proven SerDes interface IP at
40nm," said David DeMaria, Vice President of Business Operations for MoSys. "The
availability of our PCI Express 2.0 PHY and its seamless interoperability with
Denali`s PCI Express controllers ensures speedy time to market for our
customers` chip designs."

"The high speed interface requirements for our ASICs are demanding," said Anil
Mankar, Senior Vice President of VLSI Engineering for Mindspeed Technologies.
"We selected the PCI Express 2.0 solution from MoSys because it precisely met
our requirements."

"Customers of our ASIC designs have stringent requirements for high speed PHYs,"
said Amal Bommireddy, Vice President of Engineering at AppliedMicro. "MoSys` PCI
Express PHYs have helped our ASIC design teams exceed those requirements."

MoSys` PIPE 2.0 compliant PCI Express 2.0 PHY is available now to chip designers
using 40nm and 65nm processes. The PHY is available for both wirebond and
flipchip packages.

About MoSys, Inc.

Founded in 1991, MoSys® (NASDAQ: MOSY), develops, markets and licenses
differentiated embedded memory and high speed parallel and serial interface IP
for advanced SoC designs. MoSys` patented 1T-SRAM® and 1T-Flash® memory
technologies offer a combination of high density, low power consumption, high
speed and low cost advantages that are unmatched by other available memory
technologies for a variety of networking, computing, storage and
consumer/graphics applications.

MoSys` silicon-proven interface IP portfolio includes DDR3/2 Combo PHYs, as well
as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11Gbps,
across a wide range of standards, including PCI-Express, XAUI, SATA, USB and 10G
KR. MoSys IP has been production-proven in more than 175 million devices.

MoSys is headquartered in Sunnyvale, California. More information is available
on MoSys' website at http://www.mosys.com.

MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-Flash is a
trademark of MoSys, Inc.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. All other
trademarks mentioned herein are the intellectual property of their respective
owners.

MoSys, Inc.
Kristine Perham, 408-731-1804
kperham@mosys.com

Copyright Business Wire 2009