ODIS Receives Two Air Force Research Laboratory (AFRL) Contracts

SHELTON, CONNECTICUT, Apr 22 (MARKET WIRE) --
Following closely to the previous $750,000 Award in January 2010, ODIS
Inc. announced today that it has received two additional AFRL Awards for
$850,000, totaling $1.6M so far this year.

The first is a $100,000 Award to develop an "Ultra Low Power
RAM", a novel memory cell using the ODIS's optoelectronic thyristor
within its III-V Planar OptoElectric Technology ("POET"). Very
high density and low storage power may be achieved with the cell
represented as the cross-point of an array. The memory design will enable
it to be fully compatible with integrated optoelectronic CHFET/thyristor
logic and optical I/O. Fabricated in radiation hard gallium arsenide
("GaAs"), the structure enables both static and dynamic
operation.

ODIS also announced the receipt of a $750,000 Award to develop
"Optoelectronic Directional Couplers for Switching Fabric",
switching fabric on a single chip is a device technology that is required
to enable the coordination and routing of multiple optical input signals
to arbitrary multiple output ports without optoelectronic conversation
which is essential technology for optical communication switching hubs
and routers. Targeted for future military satellite missions, just like
the Phase I, it will greatly reduce power requirements and be designed
radiation hard.

Relating to the Phase I Award, Dr. Geoff Taylor, Chief Scientist of ODIS
Inc., stated, "The digital signal processing and static memory,
currently implemented exclusively in CMOS technology have now reached
scaling limits in chip size and power. The new memory cell uses the
thyristor latching function in the vertical direction to achieve super
high density and a power down mode within an inversion channel to achieve
ultra-low storage dissipation." Dr. Taylor added, "The
commercial opportunity is for memory embedded within processors in next
generation floating point gate arrays." Regarding the Phase II
Award, Dr. Taylor goes on to say, "ODIS's development of POET as an
integrated optoelectronic platform with the capability to realize arrays
of in-plane optical switches and the associated optoelectronic routing
circuitry, will enable it to meet AFRL's satellite communications
technology requirements on a single chip or chipset. Here as well, the OE
integration reduces the weight and power of the craft and indicates a
pathway to realize the high speed satellite OE systems of the
future."

"In my opinion, the receipt of these Awards so closely to the last
one indicates that ODIS, through the use of the patented POET process, is
being viewed as having the potential to produce tremendous cost savings
with enhanced capability to the U.S. Air Force and Space Missile Command
in future missions," said Leon (Lee) Pierhal, President of ODIS Inc.
"Quite significant is the opportunity to address the high density
memory market for next generation data processors which is identified to
be a huge market as the chip industry pushes Moore's law beyond the
limits of Si CMOS into the optoelectronic world. The Phase II technology
effort embraces low cost switch architecture and component capability to
address the distribution of fiber optic signals for LAN, MAN and WAN
applications and for the exploding "Fiber to the Home"
commercial market," Pierhal added.

At the heart of this technology is ODIS's new and patented semiconductor
fabrication process called POET, which is based on a novel Group III-V
materials structure. POET is a patented Group III-V materials system that
supports monolithic fabrication of ICs containing active and passive
optical elements, together with high-performance analog and digital
elements, allowing the economical integration of many optical devices
together with dense, high-speed analog and high-speed, low-power digital
elements in monolithic ICs.

About ODIS Inc.

ODIS Inc. ("Opel Defense Integrated Systems") is a Delaware
Corporation headquartered in Shelton, Connecticut with offices in Rhode
Island and its Research and Development facilities located on the campus
of the University of Connecticut. ODIS designs communications
transceivers, optoelectronic integrated platforms and infrared sensor
type products for military and industrial applications.

A leader in gallium arsenide III-V compound structures, the Company has
been awarded 32 patents and has 18 more patents pending. For more
information about ODIS Inc., please visit www.opelinc.com/odis.html.

On Behalf of the Board of Directors

Michael McCoy, Secretary

Contacts:
ODIS Inc.
Leon M. Pierhal
President
(401) 338-1212
leepierhal@aol.com
www.opelinc.com/odis.html

WT Blase & Associates Inc.
Bill Blase or Stephanie Kuffner
Media Relations
(212) 221-1079
solar@wtblase.com

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