RFMD(R) Announces Qualification of GaN Power Semiconductor Process for 65 Volt Operation

BALTIMORE, June 7, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of high-performance
radio frequency components and compound semiconductor technologies, today
announced it has qualified its GaN1 power semiconductor process technology for
65V operation. The high reliability power semiconductor process technology
supports RFMD's GaN-based power semiconductor product designs and is also
available to foundry customers through RFMD's Foundry Services business unit.
Previously, RFMD's GaN1 power semiconductor process technology had been
qualified for 48V operation. The increase in operating voltage from 48V to 65V
enables miniature, 0.5kW power devices with high operating efficiency for L- and
S-Band military and civilian radar applications.

Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), said,
"The qualification of our 65V GaN1 power process technology enables RFMD to
target multiple higher voltage market opportunities across MPG's diversified
markets while helping our foundry customers to design smaller periphery die for
high power applications. RFMD continues to optimize our game-changing GaN
process technology for both foundry customers and proprietary RFMD product
designs, with particular emphasis on higher peak efficiency, lower power
consumption and higher linearity."

RFMD's 48V GaN1 process technology is an established performance leader in the
high power semiconductor industry, and RFMD's 65V GaN1 process technology moves
the performance bar even higher. RFMD's 65V GaN1 process technology demonstrates
a Mean-Time-to-Failure (MTTF) of 43 million hours with a channel temperature of
200 degrees Celsius at power densities of 10Watts, a significant industry
performance benchmark. The high reliability power semiconductor process is
ideally suited for higher voltage operations in next generation military, radar,
and public/defense mobile radio applications.

Additional information on RFMD's Foundry Services business unit can be obtained
by contacting RFMDFoundryServices@rfmd.com. RFMD is showcasing its foundry
services offerings at the IEEE international Microwave Symposium 2011, June 6-8,
at the Baltimore Convention Center, in Booth 1402.

About RFMD

RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the cellular
handset, wireless infrastructure, wireless local area network (WLAN),
CATV/broadband and aerospace and defense markets. RFMD is recognized for its
diverse portfolio of semiconductor technologies and RF systems expertise and is
a preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified
manufacturer with worldwide engineering, design, sales and service facilities.
RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For
more information, please visit RFMD's web site at www.rfmd.com.

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to bring new products to market, our reliance on inclusion in third party
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and other risks and uncertainties, which are described in more detail in RF
Micro Devices' most recent Annual Report on Form 10-K and other reports and
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CONTACT: At RFMD(R)
Doug DeLieto
VP, Investor Relations
336-678-5322