DUBLIN--(Business Wire)--
Research and Markets
(http://www.researchandmarkets.com/research/f10c57/nanometer_cmos) has announced
the addition of Pan Stanford Publishing Pte. Ltd.'s new report "Nanometer CMOS"
to their offering.
This book gives a comprehensive overview of all the important issues concerning
modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling
issues, and an in-depth discussion of nanometer MOSFETs. Both classical
nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little
coverage in textbooks, are treated in detail. The device structures, merits, and
drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI
MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.
An entire chapter is devoted to the emerging and rapidly growing field of RF
MOSFETs/RF CMOS, and the discussion extends to the important future trends in of
nanometer CMOS technology and the problems and limits of scaling.
Readership: Graduates and postgraduate students, researchers, engineers and
managers in the fields of electrical & electronic engineering and
nanoelectronics & microelectronics.
Key Topics Covered:
* Evolution and Recent Advances in Si Electronics
* MOSFET Fundamentals, Theory, and Modeling
* Nanometer MOSFETs
* RF MOSFETs
* Overview of Nanometer CMOS Technology
* Challenges of Giga-Scale Integration
For more information visit
http://www.researchandmarkets.com/research/f10c57/nanometer_cmos
Research and Markets
Laura Wood, Senior Manager,
press@researchandmarkets.com
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Copyright Business Wire 2009
