Merrimac Teams With Nitronex for Development of Highly Integrated Multi-Mix
Power Amplifiers for Wireless Infrastructure Applications
WEST CALDWELL, N.J., March 31 /PRNewswire-FirstCall/ -- Merrimac
Industries, Inc. (Amex: MRM) today announced that it has entered into a
Memorandum of Understanding (MOU) with Nitronex Corporation to develop new
highly integrated power amplifiers using Merrimac's proprietary Multi-Mix(R)
multilayer circuit technology and high-power gallium nitride (GaN) transistor
technology from Nitronex. GaN device technology is highly sought as a higher-
power replacement for GaAs and LDMOS device technology in communications
equipment. The discrete transistors are ideal for high-power transmitter
amplifiers in third-generation (3G) and fourth-generation (4G) wireless
communications systems as well as emerging broadband WiMAX base stations.
Nitronex has developed and qualified a GaN on Silicon process to service the
needs of both Commercial Users in the Wireless Infrastructure Industry and
Military users involved in Communications, Electronic Warfare and Radar
systems. The ability to deliver high power, high frequency and broadband
devices with outstanding efficiency is a key reason why users in both
Commercial and Military systems are designing in GaN devices now.
Because of its outstanding thermal dissipation, Merrimac's Multi-Mix(R)
technology supports the design and manufacture of reliable high-power
amplifiers using RF power transistor die rather than larger, more expensive
packaged devices. The use of transistor die allows extensive use of automation
in the amplifier manufacturing process, resulting in extremely compact, cost-
effective, and highly integrated amplifiers well suited for a wide range of
commercial wireless infrastructure applications, including cellular and WiMAX
basestations.
Multilayer Multi-Mix(R) Microtechnology provides high levels of
integration for both active and passive designs. Because Multi-Mix(R)
amplifier designs provide short, efficient thermal paths for active devices,
even high-power-density devices such as the Nitronex GaN transistor die, they
can be made extremely compact without hot spots that can compromise
reliability and amplifier operating lifetime. Multi-Mix(R) Microtechnology is
suitable for any high-power RF transistor technology currently used in
commercial and military applications, including gallium arsenide (GaAs),
silicon LDMOS, silicon carbide (SiC), and GaN.
Merrimac and Nitronex have agreed to consider the joint development of a
roadmap for next-generation amplifier designs based on Merrimac's Multi-Mix(R)
amplifier platform and Nitronex' high-performance GaN transistor technology.
The roadmap will include the development of prototype units to be used to
demonstrate the capabilities of the Multi-Mix(R) GaN amplifiers for different
frequency bands and applications.
According to Nitronex VP Sales and Marketing Chris Rauh, "We think the
combination of the Multilayer Multi-Mix(R) Microtechnology from Merrimac and
Nitronex GaN on Silicon devices is a real winner for our customers in many
markets."
Merrimac Chairman and CEO Mason N. Carter commented, "Merrimac is eager to
work with Nitronex on the development of high-power Multi-Mix(R) amplifiers.
By combining the high power density of their GaN transistors with the
excellent thermal properties of multilayer Multi-Mix(R) Microtechnology, we
are confident that we will develop new benchmarks in terms of the RF amplifier
power/size ratio, reliability, and value for our customers."
About Nitronex
Specializing in the development and manufacturing of gallium
nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader
in high-performance GaN-on-Si RF power devices. Based on its patented
SIGANTIC(R) process -- gallium nitride on silicon technology -- Nitronex is at
the forefront of commercializing GaN technology for RF applications. The
company's ability to combine the disciplines of material growth, wafer
processing, device design and wireless applications knowledge is unique to the
industry. Nitronex was founded in 1999 by graduates of the wide bandgap
program at North Carolina State University and is headquartered in Durham,
North Carolina. It holds 19 patents with 19 others pending.
About Merrimac
Merrimac Industries, Inc. is a leader in the design and manufacture of RF
Microwave signal processing components, subsystem assemblies, and Multi-Mix(R)
micro-multifunction modules (MMFM(R)), for the worldwide Defense, Satellite
Communications (Satcom), Commercial Wireless and Homeland Security market
segments. Merrimac is focused on providing Total Integrated Packaging
Solutions(R) with Multi-Mix(R) Microtechnology, a leading edge competency
providing value to our customers through miniaturization and integration.
Multi-Mix(R) MMFM(R) provides a patented and novel packaging technology that
employs a platform modular architecture strategy that incorporates embedded
semiconductor devices, MMICs, resistors, passive circuit elements and plated-
through via holes to form a three-dimensional integrated module used in High
Power, High Frequency and High Performance mission-critical applications.
Merrimac Industries facilities are registered under ISO 9001:2000, an
internationally developed set of quality criteria for manufacturing
operations.
Merrimac Industries, Inc. has facilities located in West Caldwell, NJ and
San Jose, Costa Rica and has approximately 180 co-workers dedicated to the
design and manufacture of signal processing components, gold plating of high-
frequency microstrip and bonded stripline Teflon (PTFE) circuits and
subsystems providing Total Integrated Packaging Solutions(R) for wireless
applications. Merrimac (MRM) is listed on the American Stock Exchange. Multi-
Mix(R), Multi-Mix PICO(R), MMFM(R), System In A Package(R), SIP(R) and Total
Integrated Packaging Solutions(R) are registered trademarks of Merrimac
Industries, Inc. For more information about Merrimac Industries, Inc. please
visit our website http://www.merrimacind.com .
This press release contains statements relating to future results of the
Company (including certain projections and business trends) that are "forward-
looking statements" as defined in the Private Securities Litigation Reform Act
of 1995. Actual results may differ materially from those projected as a result
of certain risks and uncertainties. These risks and uncertainties include, but
are not limited to: risks associated with demand for and market acceptance of
existing and newly developed products as to which the Company has made
significant investments, particularly its Multi-Mix(R) products; the
possibilities of impairment charges to the carrying value of our Multi-Mix(R)
assets, thereby resulting in charges to our earnings; risks associated with
adequate capacity to obtain raw materials and reduced control over delivery
schedules and costs due to reliance on sole source or limited suppliers;
slower than anticipated penetration into the satellite communications, defense
and wireless markets; failure of our Original Equipment Manufacturer or OEM
customers to successfully incorporate our products into their systems; changes
in product mix resulting in unexpected engineering and research and
development costs; delays and increased costs in product development,
engineering and production; reliance on a small number of significant
customers; the emergence of new or stronger competitors as a result of
consolidation movements in the market; the timing and market acceptance of our
or our OEM customers' new or enhanced products; general economic and industry
conditions; the ability to protect proprietary information and technology;
competitive products and pricing pressures; our ability and the ability of our
OEM customers to keep pace with the rapid technological changes and short
product life cycles in our industry and gain market acceptance for new
products and technologies; risks relating to governmental regulatory actions
in communications and defense programs; and inventory risks due to
technological innovation and product obsolescence, as well as other risks and
uncertainties as are detailed from time to time in the Company's Securities
and Exchange Commission filings. These forward-looking statements are made
only as of the date hereof, and the Company undertakes no obligation to update
or revise the forward-looking statements, whether as a result of new
information, future events or otherwise.
Contact: Mason N. Carter, Chairman & CEO
973-575-1300, ext. 1202
MNC@merrimacind.com
SOURCE Merrimac Industries, Inc.
Mason N. Carter, Chairman & CEO, Merrimac Industries, Inc., +1-973-575-1300,
ext. 1202, MNC@merrimacind.com
