Toshiba Adds Small Signal P-Channel MOSFETs for Load Switching in Mobile Handsets and Portable Electronics

Toshiba Adds Small Signal P-Channel MOSFETs for Load Switching in Mobile
Handsets and Portable Electronics
Low On-Resistance Power MOSFETs for System Power Supplies in Portable
Electronics Applications that Require Lower Voltage and Lower Power

IRVINE, Calif., Nov. 4 /PRNewswire/ -- Toshiba America Electronic Components,
Inc., (TAEC)*, a committed leader that collaborates with technology companies
to create breakthrough designs, has expanded its lineup of P-channel power
MOSFETs for load switching with a next-generation selection of low voltage,
1.5V operation devices with lower On-Resistance (R(DS)(ON)) for applications
with current ranging from 1.0A to 5.0A. Typical applications are mobile
handsets, digital cameras, portable audio players and other portable
electronic devices.

The new lineup includes five high speed switching power MOSFETs with -20V
drain source voltage (V(DSS)) to provide designers with a choice of
On-Resistance (R(DS)(ON)), input capacitance, and packaging. The family is
offered three different small thin packages: 3-pin TSM (2.9 x 2.8 x 0.7mm),
6-pin UF6 (2.0 x 2.1 x 0.7mm), and 3-pin UFM (2.0 x 2.1 x 0.7mm).

"As system power supplies for mobile handset components such as baseband ICs
move toward lower voltage and power, there is an increasing need for low
R(DS)(ON) MOSFETs," said Talayeh Saderi, business development engineer, RF and
small signal devices, for TAEC.

New devices in TSM packages include the SSM3J307T, which features R(DS)(ON) of
83mohm (max.) at V(GS) = -1.5V or 40mohm at -2.5V, with input capacitance of
1170 pF(1); and the SSM3J321T with R(DS)(ON) of 137mohm (max.) at V(GS) =
-1.5V and 62mohm at -2.5V, with input capacitance of 640 pF(1). For
comparison, the previous generation SSM3J13T, a -12V(DSS) device, features
R(DS)(ON) of 95mohm (max.) at V(GS) = -2.5V, with input capacitance of
890pF(1).

Another new MOSFET in UF6 packaging, the SSM6J409TU, features R(DS)(ON) of
72.3 mohm (max.) at V(GS) = -1.5V and 30.2 mohm at -2.5V, with input
capacitance of 1100 pF(1). Its predecessor, the SSM6J51TU, features R(DS)(ON)
of 150mohm (max.) at V(GS) = -1.5V, and input capacitance of 1700 pF(1).

Two new MOSFETs in UFM packaging are the SSM3J130TU, a -20V(DSS) device with
R(DS)(ON) of 63.2 mohm (max.) at V(GS) = -1.5V and 41.1 mohm at -2.5V, with
input capacitance of 1800 pF(1) and the SSM3J129TU, a -20V(DSS) device with
R(DS)(ON) of 137mohm (max.) at V(GS) = -1.5V and 80 mohm at -2.5V, with input
capacitance of 640 pF(1). For comparison, the previous generation SSM3J120TU
features R(DS)(ON) of 140mohm (max.) at V(GS) = -1.5V and input capacitance of
1484 pF(1).

Electrical and Optical Characteristics (Ta -25 degrees C, I(F)=20mA)

R(DS)(ON) max(mohm)
------------------------------
V(DSS) I(D) V(GS)= V(GS)= V(GS)= V(GS)=
Part number Polarity (V) (A) -1.5V -1.8V -2.5V -4.5V
20V V(DSS)
SSM3J307T P-channel -20 -5 83 56 40 31
SSM3J321T P-channel -20 -5.2 137 88 62 46
SSM6J409TU P-channel -20 -9.5 72.3 46.3 30.2 22.1
SSM3J130TU P-channel -20 -4.4 63.2 41.1 31 25.8
SSM3J129TU P-channel -20 -4.6 137 88 62 46

Input
Capacitance
Part number (pF)(1) Process Package
20V V(DSS)
SSM3J307T 1170 U-MOS V TSM
SSM3J321T 640 U-MOS V TSM
SSM6J409TU 1100 U-MOS V UF6
SSM3J130TU 1800 U-MOS VI UFM
SSM3J129TU 640 U-MOS V UFM

Pricing and Availability
Samples of all the devices described above are available now, and mass
production is ramping. Prices begin at $0.12, in sample quantities.

Toshiba's Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a
worldwide basis, based on annual revenue from international shipments of total
discrete products. According to the most recent annual report from market
research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top
discrete semiconductor supplier. (Source: "2008 Worldwide Semiconductor Market
Share Report," Gartner, released April 2009). More specifically, Toshiba is a
leading supplier in a number of discrete product categories, including power
transistors, rectifiers and thyristors, LMOS logic, CMOS logic, photocouplers,
Toslinks(TM), LEDs, small signal diodes and transistors. The company's
discrete devices are designed to meet the growing demand for high-performance
and lower voltages in today's wireless telecommunications and consumer
electronics applications, while emphasizing its strength in the automotive and
industrial markets.

*About TAEC and Toshiba Corp.
Through proven commitment, lasting relationships and advanced, reliable
electronic components, Toshiba enables its customers to create market-leading
designs. Toshiba is the heartbeat within product breakthroughs from OEMs,
ODMs, CMs, distributions and fabless chip companies worldwide. A committed
electronic components leader, Toshiba designs and manufactures high-quality
flash memory-based storage solutions, discrete devices, displays, advanced
materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging
products, microcontrollers and wireless components that make possible today's
leading cell phones, MP3 players, cameras, medical devices, automotive
electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating
company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation,
Japan's largest semiconductor manufacturer and the world's third largest
semiconductor manufacturer (Gartner, 2008 WW Semiconductor Market Share
Report, April 2009). For additional company and product information, please
visit http://www.toshiba.com/taec/.

Information in this press release, including product pricing and
specifications, content of services and contact information, is current and
believed to be accurate on the date of the announcement, but is subject to
change without prior notice. Technical and application information contained
here is subject to the most recent applicable Toshiba product specifications.
In developing designs, please ensure that Toshiba products are used within
specified operating ranges as set forth in the most recent Toshiba product
specifications and the information set forth in Toshiba's "Handling Guide for
Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This
information is available at www.chips.toshiba.com, or from your TAEC
representative.

(1)at V(DS) = -10V, V(GS) = 0V, f = 1MHz

SOURCE Toshiba America Electronic Components, Inc.

Jan Johnson of MultiPath Communications, +1-714-633-4008,
jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; or
Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099,
rebecca.bueno@taec.toshiba.com