Novellus Improves Tungsten Resistivity Performance With Advanced LRWxT(TM) Process

Novellus Improves Tungsten Resistivity Performance With Advanced LRWxT(TM)
Process
Contact Resistance Can Be Reduced As Much As 30 Percent For 3Xnm Memory and
Logic Devices

SAN JOSE, Calif., Nov. 3 /PRNewswire-FirstCall/ -- Novellus Systems (Nasdaq:
NVLS) announced today that it has developed a new tungsten deposition process,
called LRWxT, that can effectively reduce contact and line resistance at the
3Xnm technology node compared to conventional tungsten chemical vapor
deposition (CVD-W) technology. The new approach uses the company's ALTUS® Max
system for a unique deposition process sequence that results in highly
conformal, large grain size films with lower tungsten bulk resistivity. The
new process was developed and tested on device features provided by NEC
Electronics, and the breakthrough was presented at this year's annual Advanced
Metallization Conference in Baltimore.

(Photo: http://www.newscom.com/cgi-bin/prnh/20091103/SF04485)
(Logo: http://www.newscom.com/cgi-bin/prnh/20091020/SF95832LOGO)

As semiconductor manufacturing technology approaches 32nm design rules, memory
and logic device manufacturers face challenges in scaling the resistivity of
contacts, vias and bit line interconnects. The thinner tungsten films that are
required to fill the smaller critical dimensions associated with 3Xnm devices
have higher resistivity. This thin-film effect will continue to increase as
these critical dimensions shrink at future nodes. To address the resistance
scaling issue, Novellus developed the LRWxT tungsten deposition process that
enables optimal feature fill while reducing the resistivity of the deposited
bulk tungsten layer.

LRWxT employs the high productivity, multi-station sequential architecture of
the ALTUS Max CVD-W system to deliver a unique, three-step deposition process.
First, a <20 angstrom thick nucleation layer is deposited using Novellus'
proprietary PNL®xT (Pulsed Nucleation Layer) technology. Next, a
low-resistivity tungsten (LRWxT) treatment step is applied to promote growth
of the low resistivity bulk film. Finally, an optimized CVD-W film is
deposited for the bulk fill of nanometer-sized structures.

Figure 1 shows cross-sectional images of 55nm contact features filled with a)
a process using conventional, silane-based nucleation, b) a PNLxT process, and
c) the LRWxT process. The images show that the LRWxT filled features contain
significantly larger tungsten grains as compared to the conventional process,
and moderately larger grains than the PNLxT process. The large grain sizes and
conformal fill are the key differentiating characteristics of the LRWxT
process, and provide the mechanism for lower tungsten bulk resistivity.

Figure 2 demonstrates how the larger grain structure of the LRWxT films lowers
the contact resistance (Rc) of 55nm N and P type NiSi contacts. While the
PNLxT process shows a 5-20 percent reduction in Rc and tighter distribution as
compared to the conventional process, the LRWxT process yields a 20-30 percent
reduction in Rc. The data validates that LRWxT can be effective in reducing
contact and line resistance at the 3Xnm technology node, ultimately resulting
in lower interconnect delays and faster devices.

"As semiconductor manufacturers advance to smaller technology nodes,
minimizing the resistivity effects from device scaling is critical to
improving electrical performance in logic and memory devices," said Dr.
Patrick Lord, senior vice president for Novellus' Direct Metals, Surface
Preparation, and Gapfill business units. "The ALTUS Max LRWxT process delivers
industry-leading productivity to our customers while improving the speed and
efficiency of their devices."

About Novellus' ALTUS Tungsten Deposition Technology
Introduced in 1991, ALTUS is the industry's tool of choice for tungsten
deposition. The system provides leading productivity and technology for
contact and local interconnect applications. The ALTUS Pulsed Nucleation Layer
(PNL) technology integrates a high-throughput atomic layer deposition (ALD)
nucleation layer with a bulk chemical vapor deposition process. Novellus'
Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation
layer and CVD fill to be performed sequentially on separate stations within
the same ALTUS chamber. The ALTUS Max, introduced in 2008, incorporates
reliability and throughput enhancements to provide a 25 percent increase in
productivity. The ALTUS Max system provides benchmark productivity and
production availability, resulting in the lowest-cost-of-ownership tungsten
deposition solution in the industry.

About Novellus:
Novellus Systems, Inc. (Nasdaq: NVLS) is a leading provider of advanced
process equipment for the global semiconductor industry. The company's
products deliver value to customers by providing innovative technology backed
by trusted productivity. An S&P 500 company, Novellus is headquartered in San
Jose, Calif. with subsidiary offices across the globe. For more information,
please visit www.novellus.com

Novellus, ALTUS and PNL are registered trademarks, and LRWxT is a trademark of
Novellus Systems, Inc.

SOURCE Novellus Systems, Inc.

Bob Climo of Novellus Systems, Inc., +1-408-943-9700, bob.climo@novellus.com;
or Marla Kertzman of The Hoffman Agency, +1-408-975-3067,
mkertzman@hoffman.com, for Novellus Systems, Inc.