Mitsubishi Electric Announces Sale of 'MGF4935AM' Ku Band Low Noise GaAs HEMT

TOKYO--(Business Wire)--
Mitsubishi Electric Corporation (President and CEO: Setsuhiro
Shimomura) announced today it has developed a full-mold package low
noise Ku(1) band GaAs High Electron Mobility Transistor (HEMT), the
MGF4935AM, highly suitable for low noise amplifiers in Direct
Broadcast Satellite (DBS) reception systems and Very Small Aperture
Terminal (VSAT) systems. Shipment will begin on May 26, 2008.

1: Downlink: 12GHz, Uplink: 14GHz

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*T
Sale Summary
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Product Model Features Sample price Shipment Production
date
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Low Noise NF: 0.45dB May 26, 4 million /
GaAs HEMT MGF4935AM (2) Gs: 12.0dB 25 yen 2008 month
(f=12GHz)
----------------------------------------------------------------------
2: Suitable for use in first stage of low noise amplifiers for DBS
*T

Aim of Sale

Satellite communication systems can build a much larger service
area network in a short time compared to fiber optic cable
communication systems or other communication systems. They are
expected to be quickly adopted by countries like China, which is
experiencing rapid economic growth.

At the same time, when it comes to satellite antennae, a reception
converter that receives Ku band waves from satellites converts them
into 1-2GHz to send them to the signal processing circuit; HEMTs are
used in low noise amplifiers for reception converters, and the
increase in satellite communication systems is creating a larger
demand for these transistors.

Mitsubishi Electric has developed a full-mold package HEMT with
the lowest noise characteristics in the industry. Full-mold package
HEMT is lower-priced compared to other types of HEMTs, and it improves
cost performance in satellite communication equipment by using this
product in the first stage of amplifiers, which strictly requires low
noise characteristics.

Product Features

1) Lowest noise characteristics in full-mold package, suitable for
use in the first stage of amplifiers

By improving chip performances and by optimizing package
structure, the noise figure (NF) has been improved by 0.05dB to
0.45dB, compared to our previous model (full-mold package MGF4934BM).
This improvement allows this product to be used in the first stage of
amplifiers, which requires low noise characteristics. The full-mold
package HEMT, available at a lower price than other HEMTs, improves
cost performance in satellite communication equipment.

2) An industry standard 4-pin full-mold package, for shorter
development periods for satellite communication equipment
manufacturers

The MGF4935AM has an industry standard 4-pin full-mold package. An
unchanged foot pattern from the previous model will shorten
development periods for satellite communication equipment
manufacturers.

Future Developments

Mitsubishi Electric will increase its lineup of full-mold packaged
low noise GaAs HEMTs with improvements in gain and noise
characteristics.

Features

-- Recommended bias condition: VDS=2V, ID=10mA

-- Noise figure (NFmin.): 0.45dB(f=12GHz, typical)

-- Associated gain (Gs): 12.0dB(f=12GHz, typical)

About Mitsubishi Electric

With over 80 years of experience in providing reliable,
high-quality products to both corporate clients and general consumers
all over the world, Mitsubishi Electric Corporation (TOKYO:6503) is a
recognized world leader in the manufacture, marketing and sales of
electrical and electronic equipment used in information processing and
communications, space development and satellite communications,
consumer electronics, industrial technology, energy, transportation
and building equipment. The company recorded consolidated group sales
of 4,049.8 billion yen (US$ 40.5 billion(3)) in the fiscal year ended
March 31, 2008. For more information visit
http://global.mitsubishielectric.com

3: At an exchange rate of 100 yen to the US dollar, the rate given
by the Tokyo Foreign Exchange Market on March 31, 2008

Mitsubishi Electric Corporation
Product Inquiries:
Kazuhiko Sato, +81-3-3218-3014
High Frequency & Optical Semiconductor
Global Marketing Department B
Sato.Kazuhiko@aj.MitsubishiElectric.co.jp
http://www.mitsubishichips.com/
Media Contact:
Yurika Fujimoto, +81-3-3218-3380
Public Relations Division
prd.gnews@nk.MitsubishiElectric.co.jp
http://global.mitsubishielectric.com/news/

Copyright Business Wire 2008