Raytheon charges RF Micro with patent infringement

NEW YORK, Nov 28 (Reuters) - Defense contractor Raytheon Co (RTN.N) has charged chip maker RF Micro Devices Inc (RFMD.O) with patent infringement and is seeking damages.

Raytheon alleges in a complaint filed last week in the U.S. District Court of Central California that RF Micro's product RF3866, known as a "two stage low noise amplifier," infringes on a patent issued to Raytheon in 1992.

Raytheon is seeking damages "adequate to compensate Raytheon for infringement" of the technology called "high electron mobility transistor."

RF Micro said on Wednesday that it will defend itself against the charges.

"We feel that the claim is without merit and that it will result in a favorable disposition for RFMD," Chief Financial Officer Dean Priddy told Reuters.

RF Micro's shares rose 17 cents, or 3 percent, to $5.70 in morning trading on Nasdaq. Raytheon gained 20 cents to $61.70 on the New York Stock Exchange. (Reporting by Chris Reiter; Editing by Maureen Bavdek)