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Fujitsu Ltd and Transphorm, Inc. to integrate GaN power device businesses

Wednesday, 27 Nov 2013 07:00pm EST 

Fujitsu Ltd:Says Fujitsu Ltd, Fujitsu Semiconductor Limited, and Transphorm, Inc. have reached an agreement whereby Fujitsu Semiconductor and Transphorm will integrate their gallium-nitride (GaN) power devices for power supplies businesses.Says Fujitsu and Fujitsu Semiconductor will establish a new company in Japan for the GaN power device business, and will transfer to the new company their combined design and development assets as well as intellectual property rights in GaN power devices.Says the two companies will make an in-kind investment in Transphorm in the form of the new company's shares, and will receive an equivalent value of shares in Transphorm in return.Says as a result of this transaction, the new company will become a wholly owned subsidiary of Transphorm, while Fujitsu and Fujitsu Semiconductor will make a cash investment in Transphorm and will contribute to Transphorm's management in their roles as minority shareholders.Says the employees at Fujitsu and Fujitsu Semiconductor who are directly involved in the GaN power device business will be reassigned to the new company, where they will continue development and production work with Transphorm's employees.Says after the integration, Transphorm will continue R&D work at both its prototyping line in the US as well as Fujitsu Semiconductor's Aizu-Wakamatsu plant, which will be under exclusive contract with Transphorm to handle wafer processing. 

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