TriQuint Semiconductor, Inc. Wins New $12.3 Million GaN DARPA Contract To Develop Ultra-Fast Power Switch Technology

TriQuint Semiconductor, Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions. TriQuint was selected by DARPA as the prime contractor for MPC Technical Area I, which seeks to develop a high-speed, DC-to-DC switch (modulator) and related process technology based on TriQuint's enhancement-mode GaN transistors.