Profile: GT Advanced Technologies Inc (GTAT.OQ)
22 Jul 2014
GT Advanced Technologies Inc., incorporated on September 27, 2006, is diversified technology company with crystal growth equipment and solutions for the global solar, light emitting diode (LED) and electronics industries. The Company operates in three segments: its polysilicon business, its photovoltaic (PV), business and its sapphire business. The Company's principal products are Silicon Deposition Reactors (SDR) and related equipment used to produce polysilicon, the key raw material used in silicon-based solar wafers and cells; Advanced sapphire crystallization furnaces (ASF) which are used to crystallize sapphire boules, and Directional solidification (DSS) furnaces and related equipment used to cast multicrystalline and MonoCast crystalline silicon ingots. On January 7, 2013, the Company announced the idling of its HiCz pilot manufacturing facility in Hazelwood, Missouri. On November 8, 2012, the Company acquired certain assets of Twin Creeks Technologies, Inc. (Twin Creeks). In May 2013, the Company acquired the business of Thermal Technology LLC.
The focus of the Company's PV business is the development, manufacture and sales of crystallization growth furnaces to produce silicon ingots used in the production of solar wafers. The Company's principal product line has been the DSS family of casting furnaces that are used to produce multicrystalline ingots and MonoCast ingots. As of December 31, 2012, the Company shipped approximately 3,300 DSS crystallization furnaces. The ingots are used to make photovoltaic (PV) solar wafers and cells. HiCz, or continuous Czochralski (Cz) growth process, produces monocrystalline ingots that are designed to produce more efficient wafers. The Company’s DSS furnace is a specialized furnace used to melt polysilicon and cast multicrystalline ingots. Multicrystalline ingots are used to produce solar wafers, which ultimately become solar cells. The Company markets its DSS crystallization furnaces under the names DSS450HP and DSS650. The Company's largest capacity DSS furnace, the DSS650, is capable of producing ingots that weigh up to 650 kilograms using standard silicon feedstock. In January 2012, the Company introduced its MonoCast silicon casting technology that uses the DSS furnace architecture to produce ingots comprised of a high percentage of monocrystalline material. The Company is markets MonoCast technology under the name DSS450 MonoCast.
The Company’s ancillary equipment provides operators with material handling assistance during the preparation of the crucible before it is loaded with silicon and during the loading and unloading of the crucible into the DSS furnace chamber at the start of the growth process and out of the DSS furnace chamber at the conclusion of the ingot growth process. The Company's ancillary equipment includes crucible coating stations, crucible manipulators, loaders/unloaders, extraction tools and other material handling systems required to safely transport material during the ingot growth process. The Company sells replacement parts and consumables used in its DSS furnaces and other PV equipment.
The Company's polysilicon business offers Silicon Deposition Reactors, which utilize the chemical vapor deposition process, and related trichlorosilane (TCS) technology and equipment along with engineering services to existing polysilicon producers and new market entrants. The Company's polysilicon business focuses on product design, quality control, engineering services, project management and process development related to the production of polysilicon. It markets its SDR reactors under the names SDR300, SDR400, SDR 500 and SDR 600. The Company provides equipment, technology and engineering services for the production and purification of TCSand silane. This hydrochlorination technology eliminates the need for silicon tetrachloride converters which are required when using certain other polysilicon production technology. The Company also provides ancillary equipment and technologies for producing seed rods used in its SDR reactors and for handling and processing the polysilicon rods into a finished product.
The Company's sapphire business markets and sells of the Company's ASF systems to customers to enable them to produce sapphire material. The Company also produces sapphire material, on a limited basis, for the LED and other specialty markets at its sapphire pilot production facility in Massachusetts. Its ASF systems produce monocrystalline sapphire material, referred to as sapphire boules. The sapphire boules are used to make sapphire wafers, a substrate for manufacturing LEDs, as well as sapphire blanks and windows for such applications as medical devices and watch crystals. The Company's ASF technology is based on the heat exchanger method (HEM), which is a directional solidification technique, which crystallizes the sapphire meltstock material during the growth process. The Company also uses the facility as a research and development (R&D) center to test new technology developments prior to commercial release. The Company markets and sells its ASF systems under the name ASF100. The Company also provides engineering and product design, quality control, process engineering, engineering services and field services related to the operation of its ASF furnaces. The Company produces sapphire material on a limited basis at its pilot production facility in Massachusetts. The Company sells this material to customers in the LED and other markets, such as the aerospace, defenses and medical device.
The Company manufactures and sells two principal types of sapphire materials: hems Sapphire Material and Titanium-doped Sapphire (Ti:Sapphire) Material. Using the material derives from the sapphire boule generated with its ASF furnaces, the Company cut the sapphire material in a number of different dimensions and crystal orientations, in form factors such as cores, rods, blanks, windows and tubes. The Company generates sapphire boules that are doped with titanium. The Company provides certain finishing and polishing for its Ti:Sapphire material.
The Company competes with ALD Vacuum Technologies AG, JYT Corporation, Ferrotec Corporation, PVA TePla AG, Centrotherm Elektrische Anlagen GmbH & Co., Jing Gong Technology, Zhejiang Jingsheng Mechanical & Electrical Co., Ltd, MSA Apparatus Construction for Chemical Equipment Ltd, Centrotherm Elektrische Anlagen GmbH & Co., Morimatsu Industry Co. Ltd., Poly Plant Project, Inc., Hemlock Semiconductor Corporation, Wacker Chemie AG, MEMC Electronic Materials, Inc., Renewable Energy Corporation ASA, Thermal Technology LLC, Advanced Renewable Energy Company, LLC, Rubicon Technology, Inc., Sapphire Technology Co. Ltd. (Korea), Kyocera International Inc., Saint-Gobain, Gavish Inc., and Monocrystal.
GT Advanced Technologies Inc
243 DANIEL WEBSTER HIGHWAY
MERRIMACK NH 3054